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@tvor-ceasar – yeah, but this is where things are going on transistors as things shrink (sorry, did come from the PC side). GAN is part of III-V materials, just like gallium arsenic, which is metallic and can be used for conducting in semi-conductors. They are also trying to learn how to use Cobalt as a coating for wires to prevent electron bleed (or however you would like to say or describe loosing electrons from the conductor through electron tunneling effects). Because of those effects, there may come a time where copper is replaced, etc. But that is a longer discussion of emerging trends in manufacturing at tiny scale. Note- we are moving to Gate All Around (GAA) Field Effect Transistors (FETs) really soon. https://semiengineering.com/knowledge_centers/integrated-circuit/transistors/3d/gate-all-around-fet/
https://www.freepatentsonline.com/9064943.html
These will involve either nanosheets or nanowires. It’s some pretty heady and pretty cool stuff.
Edit: This post has nothing to do with the topic at hand, I just wrote on a tangent that popped into my head. Yay for random thoughts.
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